Random Dopant Fluctuation-Induced Variability in n-Type Junctionless Dual-Metal Gate FinFETs
نویسندگان
چکیده
منابع مشابه
Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs
An analytical model of the threshold voltage variance induced by random dopant fluctuations (RDF) in junctionless (JL) FETs is derived for both cylindrical nanowire (NW) and planar double-gate (DG) structures considering only the device electrostatics in subthreshold. The model results are shown to be in reasonable agreement with TCAD simulations for different gate lengths and device parameters...
متن کاملEffect of gate electrode work function in conventional and junctionless FinFETs
This paper investigates the effect of gate electrode work function in 30 nm gate length conventional and junctionless FinFETs using technology computer-aided design (TCAD) simulations. DC parameters, threshold voltage (vt), drive current (Ion) and output resistance (Ro), and RF parameters, unity gain cutoff frequency (ft), non-quasi static (NQS) delay and input impedance (Z11) are investigated....
متن کاملAnalytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs
Analytical models for channel potential, threshold voltage, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model results are verified against simulations and good agreements are observed. Analytical expressions for subthreshold swing, drain induced barrier lowering effect, and threshold voltage roll-off characteristics are pr...
متن کاملDevice and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell
In this study, a three-dimensional ''atomistic " coupled device-circuit simulation is performed to explore the impact of process-variation-effect (PVE) and random-dopant-fluctuation (RDF) on static noise margin (SNM) of 16-nm complementary metal–oxide–semiconductor (CMOS) static random access memory (SRAM) cells. Fluctuation suppression approaches, based on circuit and device viewpoints, are fu...
متن کاملNumerical Simulation of Random Dopant Fluctuation in Sub-65 nm Metal-Oxide-Semiconductor Field Effect Transistors
As the gate length of MOSFET devices shrinks down below 100 nm, the fluctuation of major devices parameter, namely, threshold voltage (VTH), subthreshold swing, drain current (ID) and subthreshold leakage current due to influences of processes variations becomes a serious problem. Random dopant fluctuation is one of the problems. In this work, we numerically examine the fluctuation effects of r...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Electronics
سال: 2019
ISSN: 2079-9292
DOI: 10.3390/electronics8030282